The papers contained in the volume represent lectures delivered as a
1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to
identify the key submicron and ultrasubmicron device physics, transport,
materials and contact issues. Nonequilibrium transport, quantum
transport, interfacial and size constraints issues were also
highlighted. The ASI was supported by NATO and the European Research
Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF
SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN
TRANSPORT EQUATION... ... ...... .................... 33 K. Hess
TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . .
. .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . .
45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON
STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR
INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE
ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND
INTERFACES......................................... 223 C. Calandra DEEP
LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch
ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C.
Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES.................
323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON
LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN
DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION....
....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF
HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price
CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . .
. . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............
...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER
FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS
OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR
DEVICES............. 577 S. J. Allen, Jr.
