Technology Computer Aided Design for Si, SiGe and GaAs Integrated
Circuits is the first book that deals with a broad spectrum of process
and device design, and modelling issues related to various semiconductor
devices. This monograph attempts to bridge the gap between device
modelling and process design using TCAD. Many simulation examples for
different types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS
and bipolar transistors are given and compared with experimental data
from state-of-the-art devices. Bringing various aspects of silicon
heterostructures into one resource, this book also presents a
comprehensive perspective of the emerging field and covers topics
ranging from materials to fabrication, devices, modelling and
applications.
The monograph is aimed at research and development engineers and
scientists who are actively involved in microelectronics technology and
device design via Technology CAD. It will also serve as a reference for
postgraduate and research students in the field of electrical
engineering and solid-state physics, and for TCAD engineers and
developers.