Silicon-Based Millimeter-Wave Devices describes field-theoretical
methods for the design and analysis of planar waveguide structures and
antennas. The principles and limitations of transit-time devices with
different injection mechanisms are discussed, as are aspects of
fabrication and characterization. The physical properties of silicon
Schottky contacts and diodes are treated in a separate chapter. Two
chapters cover the silicon/germanium devices: physics and RF properties
of the heterobipolar transistor and quantum effect devices such as the
resonant tunneling element are described. The integration of devices in
monolithic circuits is explained and advanced technologies are presented
along with the self-mixing oscillator operation. Finally sensor and
system applications are considered.