Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications (2010)Paperback - 2010, 2 November 2014

1.Introduction and overview. Kevin O'DONNELL, Strathclyde, UK. 2.Theoretical background. Robert JONES, Exeter and Benjamin HOURAHINE, Strathclyde, UK. 3.In-situ doping of MBE III-N: RE epilayers. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA. 4.RE implantation and annealing of III-Nitrides. Katharina LORENZ and Eduardo ALVEZ, ITN Lisbon, Portugal. 5.Lattice location studies of RE impurities in III-Nitrides. Andre VANTOMME, IKS Leuven, Belgium. 6.Microscopic characterisation of luminescent III-N: RE epilayers. Robert MARTIN, Strathclyde, UK 7.High-resolution optical studies of site multiplicity in III-N: RE. Volkmar DIEROLF, Lehigh, USA. 8.RE-doped III-N quantum dots. Bruno DAUDIN, Grenoble, France. 9.Excitation model for RE ions in solids. Alain BRAUD and Pierre RUTERANA, Caen, France. 10.III-N: RE electroluminescence. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA. 11.RE-doped III-N for spintronics applications. Oliver BRANDT, PDI Berlin, Germany. 12.Summary and prospects for future work. Kevin O'DONNELL, Strathclyde, UK