Narrow gap semiconductors obey the general rules of semiconductor
science, but often exhibit extreme features within these rules because
of those properties that produce their narrow gaps. Consequently these
materials provide sensitive tests of theory, and the opportunity for the
design of innovative devices. Narrow gap semiconductors are the most
important materials for the preparation of advanced modern infrared
systems.
Physics and Properties of Narrow Gap Semiconductors offers clear
descriptions of crystal growth, material science, and device physics of
these unique materials. Topics covered include energy band structures,
optical and transport properties, phonons, impurities and defects,
recombination, and surface and interface properties. A thorough
treatment of the properties of low-dimensional systems and their
relation to infrared applications is given. In addition to covering the
technology of photoconductive detectors, photovoltaic detectors,
metal-insulator-semiconductor devices, quantum well infrared
photodetectors, infrared lasers, and single photon detectors, this book
will help readers understand semiconductor physics and related areas of
materials science and how they relate to advanced opto-electronic
devices.