The rapid evolution of integrated circuit technology has brought with it
many new materials and processing steps at the nano-scale which boost
the electrical performance of devices, resulting in faster and more
functionally-complex electronics. However, working at this reduced scale
can bring second order effects that degrade efficiency and reliability.
This book describes methods for the characterization, modelling, and
simulation prediction of these second order effects in order to optimise
performance, energy efficiency and new uses of nano-scaled semiconductor
devices. The devices and materials covered include bulk MOSFETs,
silicon-on-insulator FET devices, FinFET devices, tunneling FETs,
nanowires, quantum dots, amorphous and SiGe alloys, photodetectors and
micro-machined bolometers, and CMOS process-compatible
silicon-in-package. The modeling and characterisation methods include
computer-aided-design tools; classical, semi-classical, and
quantum-semi-classical approaches; impact of technology process on
device modeling; measurement and extraction of basic electrical
parameters; parasitic effects and de-embedding under non-conventional
bias conditions; lifetime and failure mechanisms; bias temperature
instability; time-dependent breakdown mechanisms; and new approaches for
device characterization including magneto-conductance and
magneto-tunneling.
Nano-Scaled Semiconductor Devices is essential reading for researchers
and advanced students in academia, and industry working on electronic
devices, nanotechnology and semiconductor characterization. The book
also covers a review on applications with a high societal impact, such
as; chain food production, smart and green urban environments, water
decontamination, and energy efficiency, which may serve as a reference
for governmental and environmental institutions working on green and
sustainable world environment initiatives.
