The metal-oxide-semiconductor field-effect transistor (MOSFET) was
invented in 1960. The processing technology required for suc- cessful
high volume fabrication became available in 1968. The use of doped
polycrystalline silicon as the gate electrode, instead of aluminum or
some other metal, resulted in substantial enhancement in performance.
Efforts to improve the properties of MOS devices produced new structures
such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a
great deal of work has been done to study the fabrication and properties
of MOSFET's. There are two reasons for this huge interest in this
subiect: (1) higher density of device per chip, (2) higher yields and
lower costs. Both of these factors make MOSFET's more competitive than
bipolar transistors for VLSI purposes. This book is a comprehensive
bibliography of of over 4400 references of the world literature in
MOSFET technologies. It also includes the literature on charge-coupled
devices and GaAs FET's.