Metal Oxide Semiconductor (MOS) transistors are the basic building block
ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI)
circuits using MOS technology have emerged as the dominant technology in
the semiconductor industry. Over the past decade, the complexity of MOS
IC's has increased at an astonishing rate. This is realized mainly
through the reduction of MOS transistor dimensions in addition to the
improvements in processing. Today VLSI circuits with over 3 million
transistors on a chip, with effective or electrical channel lengths of
0. 5 microns, are in volume production. Designing such complex chips is
virtually impossible without simulation tools which help to predict
circuit behavior before actual circuits are fabricated. However, the
utility of simulators as a tool for the design and analysis of circuits
depends on the adequacy of the device models used in the simulator. This
problem is further aggravated by the technology trend towards smaller
and smaller device dimensions which increases the complexity of the
models. There is extensive literature available on modeling these short
channel devices. However, there is a lot of confusion too. Often it is
not clear what model to use and which model parameter values are
important and how to determine them. After working over 15 years in the
field of semiconductor device modeling, I have felt the need for a book
which can fill the gap between the theory and the practice of MOS
transistor modeling. This book is an attempt in that direction.