Molecular Beam Epitaxy describes a technique in wide-spread use for
the production of high-quality semiconductor devices. It discusses the
most important aspects of the MBE apparatus, the physics and chemistry
of the crystallization of various materials and device structures, and
the characterization methods that relate the structural parameters of
the grown (or growing) film or structure to the technologically relevant
procedure. In this second edition two new fields have been added:
crystallization of as-grown low-dimensional heterostructures, mainly
quantum wires and quantum dots, and in-growth control of the MBE
crystallization process of strained-layer structures. Out-of-date
material has been removed.