During the past ten years the use of ion implantation for doping
semiconductors has become an active area of research and new device
development. This doping technique has recently reached a level of
maturity such that it is an integral step in the manu- facturing of
discrete semiconductor devices and integrated circuits. Ion implantation
has significant advantages over diffusion such as: precision, purity,
versatility, and automation; all of which are important for VLSI
purposes. Ion implantation has also found new applications in magnetic
bubble domain materials, superconductors, and materials synthesis. This
book is a comprehensive bibliography of 2467 references of the world's
literature on ion implantation as applied to micro- electronics. This
compilation will easily enable researchers to compare their work with
that of others. For easy access to the needed references, the contents
are divided into fifty-two subject headings. The main categories are:
bibliographies, books and symposia, review articles, theory, materials,
device applications, and equipment. An author index and a subject index
are also given to provide easy access to the references. The literature
from January 1976 to December 1980 is covered. The literature prior to
1976 is the subject, in part, of a previous book by the author (1). The
main sources searched were: Physics Abstracts (PA), Electrical and
Electronics Abstracts (EEA), Chemical Abstracts (CA), Nuclear Science
Abstracts (NSA), and Engineering Index. The volumes and numbers of the
abstracts are given to pro- vide access to the abstracts.