Ion implantation offers one of the best examples of a topic that
starting from the basic research level has reached the high technology
level within the framework of microelectronics. As the major or the
unique procedure to selectively dope semiconductor materials for device
fabrication, ion implantation takes advantage of the tremendous
development of microelectronics and it evolves in a multidisciplinary
frame. Physicists, chemists, materials sci- entists, processing, device
production, device design and ion beam engineers are all involved in
this subject. The present monography deals with several aspects of ion
implantation. The first chapter covers basic information on the physics
of devices together with a brief description of the main trends in the
field. The second chapter is devoted to ion im- planters, including also
high energy apparatus and a description of wafer charging and
contaminants. Yield is a quite relevant is- sue in the industrial
surrounding and must be also discussed in the academic ambient. The
slowing down of ions is treated in the third chapter both analytically
and by numerical simulation meth- ods. Channeling implants are described
in some details in view of their relevance at the zero degree implants
and of the available industrial parallel beam systems. Damage and its
annealing are the key processes in ion implantation. Chapter four and
five are dedicated to this extremely important subject.