Ion implantation is one of the key processing steps in silicon
integrated circuit technology. Some integrated circuits require up to 17
implantation steps and circuits are seldom processed with less than 10
implantation steps. Controlled doping at controlled depths is an
essential feature of implantation. Ion beam processing can also be used
to improve corrosion resistance, to harden surfaces, to reduce wear and,
in general, to improve materials properties. This book presents the
physics and materials science of ion implantation and ion beam
modification of materials. It covers ion-solid interactions used to
predict ion ranges, ion straggling and lattice disorder. Also treated
are shallow-junction formation and slicing silicon with hydrogen ion
beams. Topics important for materials modification topics, such as
ion-beam mixing, stresses, and sputtering, are also described.