Michael Nastasi

(Author)

Ion Implantation and Synthesis of Materials (2006)Hardcover - 2006, 9 August 2006

Ion Implantation and Synthesis of Materials (2006)
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Print Length
263 pages
Language
English
Publisher
Springer
Date Published
9 Aug 2006
ISBN-10
3540236740
ISBN-13
9783540236740

Description

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification topics, such as ion-beam mixing, stresses, and sputtering, are also described.

Product Details

Authors:
Michael NastasiJames W Mayer
Book Edition:
2006
Book Format:
Hardcover
Country of Origin:
DE
Date Published:
9 August 2006
Dimensions:
23.88 x 16 x 2.03 cm
ISBN-10:
3540236740
ISBN-13:
9783540236740
Language:
English
Location:
Berlin, Heidelberg
Pages:
263
Publisher:
Weight:
517.09 gm

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