This book describes high frequency power MOSFET gate driver
technologies, including gate drivers for GaN HEMTs, which have great
potential in the next generation of switching power converters. Gate
drivers serve as a critical role between control and power devices.
In recent years, there has been a trend to increase the switching
frequency beyond multi-MHz in switching power converters to reduce the
passive components and significantly improve power density. However,
this results in high switching loss and gate driver loss in power
MOSFETs. The novel approach in this book is the proposed Current Source
Gate Driver (CSD) including different topologies, control and
applications. The CSD can reduce the switching transition time and
switching loss significantly, and recover high frequency gate driver
loss compared to conventional voltage gate drivers. The basic idea can
also be extended to other power devices to improve high frequency
switching performance such as SiC MOSFET and IGBT. Topics covered in the
book include the state-of-the-art of power MOSFET drive techniques, the
switching loss model, current source gate drivers (CSDs), resonant gate
drivers, adaptive gate drivers and GaN HEMT gate drivers.
The book is essential reading for design engineers, researchers and
advanced students working in switching power supplies and in power
electronics generally.