The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from
October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of
the Slovak Academy of Sciences and was co-organized by the Institute of
Electrical Engineering, Slovak Academy of Sciences, Bratislava and the
Institute of Thin Film and Ion Technology, Research Centre, liilich. It
was the third in a series of workshops devoted to topics related to
heterostructure epitaxy and devices and the second included into the
category of Advanced Research Workshops (ARW) under sponsorship of the
NATO. More than 70 participants from 15 countries attended (Austria,
Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary,
Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the
USA). Novel microelectronic and optoelectronic devices are based on
semiconductor heterostructures. The goal of the ARW HEAD'97 was to
discuss various questions related to the use of new materials (e.g.
compound semiconductors based on high band-gap nitrides and low band-gap
antimonides) and new procedures (low-temperature epitaxial growth), as
well as new principles (nanostructures, quantum wires and dots, etc.)
aimed at realizing high-performance heterostructure based electronic
devices. Almost 70 papers (invited and contributed oral presentations as
well as posters) were presented at the ARW HEAD'97 and the main part of
them is included into these Proceedings.