Helium Ion Microscopy: Principles and Applications describes the
theory and discusses the practical details of why scanning microscopes
using beams of light ions - such as the Helium Ion Microscope (HIM) -
are destined to become the imaging tools of choice for the 21st century.
Topics covered include the principles, operation, and performance of the
Gaseous Field Ion Source (GFIS), and a comparison of the optics of ion
and electron beam microscopes including their operating conditions,
resolution, and signal-to-noise performance. The physical principles of
Ion-Induced Secondary Electron (iSE) generation by ions are discussed,
and an extensive database of iSE yields for many elements and compounds
as a function of incident ion species and its energy is included. Beam
damage and charging are frequently outcomes of ion beam irradiation, and
techniques to minimize such problems are presented. In addition to
imaging, ions beams can be used for the controlled deposition, or
removal, of selected materials with nanometer precision. The techniques
and conditions required for nanofabrication are discussed and
demonstrated. Finally, the problem of performing chemical microanalysis
with ion beams is considered. Low energy ions cannot generate X-ray
emissions, so alternative techniques such as Rutherford Backscatter
Imaging (RBI) or Secondary Ion Mass Spectrometry (SIMS) are examined.