This book highlights the importance of Electron Statistics (ES), which
occupies a singular position in the arena of solid state sciences, in
heavily doped (HD) nanostructures by applying Heisenberg's Uncertainty
Principle directly without using the complicated Density-of-States
function approach as given in the literature. The materials considered
are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge,
PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium
telluride, zinc and cadmium diphosphides, and quantum confined III-V,
IV-VI, II-VI and HgTe/CdTe super-lattices with graded interfaces and
effective mass super-lattices. The presence of intense light waves in
optoelectronics and strong electric field in nano-devices change the
band structure of materials in fundamental ways, which have also been
incorporated in the study of ES in HD quantized structures of
optoelectronic compounds that control the studies of the HD quantum
effect devices under strong fields. The influence of magnetic
quantization, magneto size quantization, quantum wells, wires and dots,
crossed electric and quantizing fields, intense electric field, and
light waves on the ES in HD quantized structures and superlattices are
discussed. The content of this book finds six different applications in
the arena of nano-science and nanotechnology and the various ES
dependent electronic quantities, namely the effective mass, the
screening length, the Einstein relation and the elastic constants have
been investigated. This book is useful for researchers, engineers and
professionals in the fields of Applied Sciences, solid state and
materials science, nano-science and technology, condensed matter
physics, and allied fields, including courses in semiconductor
nanostructures.
