GaN Electronics covers developments in III-N semiconductor-based
electronics for high power and high speed RF applications. The book
thoroughly examines the material properties of these polar materials,
the state of the art in substrates, epitaxial growth, device technology,
modeling, and circuit examples. It concludes with an overview of
integration and packaging. The book is based on nearly a decade of
materials and electronics research at the leading nitride research
institution in Europe. This comprehensive monograph and tutorial is an
excellent training tool for graduate students of electrical engineering,
communication engineering, and physics. It is also recommended for
materials, device, and circuit engineers in research and industry.