This book explains the physics and properties of multi-gate field-effect
transistors (MuGFETs), how they are made and how circuit designers can
use them to improve the performances of integrated circuits. It covers
the emergence of quantum effects and novel electrical transport
phenomena due to the reduced size of the devices. In addition, this book
describes the evolution of the MOS transistor from classical structures
to SOI (silicon-on-insulator) and then to MuGFETs. It includes
descriptions of the technological challenges and options, including a
physically based compact model, that are presented by these devices. It
also describes the most advanced models of MuGFET properties based on
quantum modeling as well as other MuGFET applications that include
advanced circuits and radiation-hard electronic devices.