Properties of thin films depend strongly upon the deposition technique
and conditions chosen. In order to achieve the desired film, optimum
deposition conditions have to be found by carrying out experiments in a
trial-and- error fashion with varying parameters. The data obtained on
one growth apparatus are often not transferable to another. This is
especially true for film deposition processes using a cold plasma
because of our poor under- standing of the mechanisms. Relatively
precise studies have been carried out on the role that physical effects
play in film formation such as sputter deposition. However, there are
many open questions regarding processes that involve chemical reactions,
for example, reactive sputter deposition or plasma enhanced chemical
vapor deposition. Much further research is re- quired in order to
understand the fundamental deposition processes. A sys- tematic
collection of basic data, some of which may be readily available in
other branches of science, for example, reaction cross sections for
gases with energetic electrons, is also required. The need for pfasma
deposition techniques is felt strongly in industrial applications
because these techniques are superior to traditional thin-film
deposition techniques in many ways. In fact, plasma deposition
techniques have developed rapidly in the semiconductor and electronics
industries. Fields of possible application are still expanding. A
reliable plasma reactor with an adequate in situ system for monitoring
the deposition conditions and film properties must be developed to
improve reproducibility and pro- ductivity at the industrial level.