The directed self-assembly (DSA) method of patterning for
microelectronics uses polymer phase-separation to generate features of
less than 20nm, with the positions of self-assembling materials
externally guided into the desired pattern. Directed self-assembly of
Block Co-polymers for Nano-manufacturing reviews the design,
production, applications and future developments needed to facilitate
the widescale adoption of this promising technology.
Beginning with a solid overview of the physics and chemistry of block
copolymer (BCP) materials, Part 1 covers the synthesis of new materials
and new processing methods for DSA. Part 2 then goes on to outline the
key modelling and characterization principles of DSA, reviewing
templates and patterning using topographical and chemically modified
surfaces, line edge roughness and dimensional control, x-ray scattering
for characterization, and nanoscale driven assembly. Finally, Part 3
discusses application areas and related issues for DSA in
nano-manufacturing, including for basic logic circuit design, the
inverse DSA problem, design decomposition and the modelling and analysis
of large scale, template self-assembly manufacturing techniques.