This volume contains nearly all of the papers presented at the Symposium
on "Defects and Qualities of Semiconductors" which was held in Tokyo on
May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL
TECHNOLOGY. The Symposium was organized by the promoting committee of
the research project "Quality Developement of Semiconductors by
Utilization of Crystal Defects" sponsored by the Science and Technology
Agency of Japan. Defect study in semiconductor engineering started
originally with seeking methods how to suppress generation of harmful
defects during device processing in order to achieve a high yield of
device fabrication. Recently, a new trend has appeared in which crystal
defects are positively utilized to improve the device performance and
reliability. A typical example is the intrinsic gettering technique for
Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was born. It
is becoming more important to control density and distribution of
defects than to eliminate all the defects. Very precise and deep
knowledge on defects is required to establish such techniques as
generation and development of defects desired depending on type of
devices and degree of integration. Electrical, optical and mechanical
effects of defects should be also understood correctly. Such knowledge
is essential even for eliminating defects from some specified device
regions. It is the time now to investigate defect properties and defect
kinetics in an energetic way. From this point of view, all the speakers
in this symposium were invited among the most active investigators in
the field of defect engineering in Japan.
