This book is concerned primarily with the fundamental theory underlying
the physical and chemical properties of crystalIine semiconductors.
After basic introductory material on chemical bonding, electronic band
structure, phonons, and electronic transport, some emphasis is placed on
surface and interfacial properties, as weil as effects of doping with a
variety of impurities. Against this background, the use of such
materials in device physics is examined and aspects of materials
preparation are discussed briefty. The level of presentation is suitable
for postgraduate students and research workers in solid-state physics
and chemistry, materials science, and electrical and electronic
engineering. Finally, it may be of interest to note that this book
originated in a College organized at the International Centre for
Theoretical Physics, Trieste, in Spring 1984. P. N. Butcher N. H. March
M. P. Tosi vii Contents 1. Bonds and Bands in Semiconductors 1 E.
Mooser 1. 1. Introduction . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . 1. 2. The Semiconducting Bond . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 2 1. 3. Bond Approach Versus Band
Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . 6 1. 4. Construction of the Localized X by Linear Combination
of n Atomic Orbitals . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 13 1. 5. The General Octet Rule . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . 23 1. 6. The Aufbau-Principle of the Crystal
Structure of Semiconductors . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 26 1. 7. A Building Principle for
Polyanionic Structures . . . . . . . . . . . . . . . . . . . . . . 29 I.
H. Structural Sorting . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 39 1. 9. Chemical Bonds and Semiconductivity in
Transition-Element Compounds . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 46 1. 10. Conclusion . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 53 References . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . 54 2. Electronic
Band Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . 55 G. Grosso 2. 1.
Two Different Strategies for Band-Structure Calculations . . . . . . .
55 2. 2. The Tight-Binding Method . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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