Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter
Extraction is the first book devoted entirely to a broad spectrum of
analysis and design issues related to the semiconductor device called
metal-oxide semiconductor field-effect transistor (MOSFET). These issues
include MOSFET device physics, modeling, numerical simulation, and
parameter extraction. The discussion of the application of device
simulation to the extraction of MOSFET parameters, such as the threshold
voltage, effective channel lengths, and series resistances, is of
particular interest to all readers and provides a valuable learning and
reference tool for students, researchers and engineers.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter
Extraction, extensively referenced, and containing more than 180
illustrations, is an innovative and integral new book on MOSFETs design
technology