Although silicon carbide has been used for more than half a century, its
potential as a high-temperature, corrosion-resistant semiconductor has
only recently begun to be exploited. Both crystalline and amorphous
forms of SiC offer several advantages over Si, GaAs, and InP for
high-frequency, high-power, and high-speed circuits. This volume
contains reports on high-temperature SiC MOSFETs and MESFETs, secondary
harmonic generation in SiC, a-SiC emitter heterojunction bipolar
transistors, and bulk crystal growth of 6H-SiC. For newcomers to the
field it provides an up-to-date review of technological developments in
SiC and related materials, while specialists will find here recent
references and new insights into materials for high-temperature,
high-power, and high-speed circuit applications.