During the last decade many new concepts have been proposed for
improving the performance of power MOSFETs. The results of this research
are dispersed in the technical literature among journal articles and
abstracts of conferences. Consequently, the information is not readily
available to researchers and practicing engineers in the power device
community. There is no cohesive treatment of the ideas to provide an
assessment of the relative merits of the ideas.
"Advanced Power MOSFET Concepts" provides an in-depth treatment of the
physics of operation of advanced power MOSFETs. Analytical models for
explaining the operation of all the advanced power MOSFETs will be
developed. The results of numerical simulations will be provided to give
additional insight into the device physics and validate the analytical
models. The results of two-dimensional simulations will be provided to
corroborate the analytical models and give greater insight into the
device operation.